Leuven PECVD设备.jpg

Plasma-enhanced chemical vapor deposition equipment uses a strong electric field to ionize the gas source molecules needed to generate plasma. The plasma contains many highly active chemical groups. These groups undergo a series of chemical and plasma reactions. A solid film is formed on the surface of the sample. It is used to deposit SiO2, SiN and other insulator thin film materials. The deposited thin film has the advantages of good uniformity, high precision and strong stress resistance.

Main Specifications:

Substrate size:

6" and below wafer, chip;

Deposit uniformity:

±3% (6"wafer);

Film thickness accuracy: 1nm;