Inductively coupled plasma etching equipment, the reaction gas is decomposed by plasma glow discharge, and the generated plasma moves to the sample surface under the acceleration of the electric field to etch the sample surface.
6" wafer and chip below; etching uniformity ± 3 % (6" wafer); etching accuracy: 0.01um
Mainly used for dry etching of Si, SiO2, SIN, graphene, ITO, Al2O3, GaN, GaAs, InGaAs and other materials
0.3um quartz hole chain
Optical silicon lens device
Shallow silicon trench etching